First amplifying device - the triode vacuum tube - Fleming (1904)
Solid-state point-contact diode (silicon)- Pickard (1906)
First radio circuits from diodes and triodes 1907-1927
Super heterodyne receiver- Armstrong (1920)
demonstration of television 1925
the field effect device - Lilienfield (1925)
Frequency modulation (FM) - Armstrong (1933)
Radar 1940
First revolution 1947 - Silicon transistor - by Bell Telephone Laboratories
Color television (1950), unipolar FET (Shockley, 1952)
Next breakthrough - pnpn triggering transistor (also known as thyristors or SCRs) - Bell Laboratories 1956
Commercial thyristor by General Electric 1958 - Beginning of Power Electronics
first integrated circuit (IC) 1958 beginning of microelectronics
first commercial operational amplifier 1968
Intel - 4004 microprocessor in 1971, 8-bit microprocessor in 1972 and gigabit memory chip in 1995
Moore’s law (Gordon E. Moore) : Observation made in the degree of device integration that the number of transistors inside an IC could be doubled every 24 months at a density that also minimizes the cost of a transistor.
Chapter-1: Semiconductors
Chapter-2: Diode Theory
Chapter-3: Diode Circuits
Chapter-4: Special-Purpose Diodes
Chapter-5: BJT Theory
Chapter-6: BJT Biasing
Chapter-7: Basic BJT Amplifiers
Chapter-8: Multistage, CC, and CB Amplifiers
Chapter-9: Power Amplifiers
Chapter-10: Field-Effect Transistors (FETs)
Chapter-11: MOSFETs
Chapter-12: Thyristors
Chapter-13: Frequency Effects
Chapter-14: Differential Amplifiers
Chapter-15: Operational Amplifiers
Chapter-16: Negative Feedback
Chapter-17: Linear Op-Amp Circuit
Chapter-18: Active Filters
Chapter-19: Non-linear Op-Amp Circuit
Chapter-20: Oscillators
Chapter-21: Regulated Power Supplies